Саріков Андрій Вікторович

визитка
Статус: 
Преподаватель
ученая степень: 
к. ф.-м. н.
Должность: 
доцент
Кафедра: 
Кафедра математики, теоретической физики и компьютерных технологий

ДАТА РОЖДЕНИЯ: 2 июля 1976
 

МЕСТО РАБОТЫ:
Основное: Институт физики полупроводников им. В. Е. Лашкарева НАН Украины, проспект Науки, 45, Киев 03028, Украина,
Тел. / Факс: +38 044 525 62 90, E-mails: andrey.sarikov@gmx.de, sarikov@isp.kiev.ua
ДОЛЖНОСТЬ: Старший научный сотрудник

По совместительству: Институт высоких технологий Киевского национального университета имени Тараса Шевченко, проспект Академика Глушкова, 2, корпус 5, Киев 03127, Украина
ДОЛЖНОСТЬ: Доцент

 

ОБРАЗОВАНИЕ:

Кафедра физической электроники, Херсонский государственный технический университет, Херсон, Украина

  • 1997 Бакалавр физики и технологии материалов и компонентов электронной техники (с отличием)
  • 1998 Магистр физики и технологии материалов и компонентов электронной техники (с отличием)

Институт физики полупроводников им. В. Е. Лашкарева НАН Украины, Киев, Украина

  • 2002 Кандидат физико-математических наук по физике твердого тела

КАРЬЕРА:

  • Бакалавр физики и технологии материалов и компонентов электронной техники (с отличием)
  • 09.1993 - 06.1998 Студент и магистрант по физике и технологии материалов и компонентов электронной техники

Отдел физических основ интегральной микроэлектроники,
Институт физики полупроводников им. В. Е. Лашкарева НАН Украины, Киев, Украина

  • 11.1998 - 11.2001 аспирант по физике твердого тела
  • 11.2001 - 12.2002 младший научный сотрудник
  • 01.2003 - 12.2003 научный сотрудник
  • 01.2004 - 09.2007 старший научный сотрудник
  • 10.2007 - 09.2010 докторант по физике твердого тела
  • 10.2010 - настоящее время старший научный сотрудник

Кафедра математики, теоретической физики и компьютерной технологии, Институт высоких технологий, Киевский национальный университет имени Тараса Шевченко, Киев, Украина

  • 02.2012 - настоящее время доцент

НАУЧНЫЕ ВИЗИТЫ:
Отдел кремниевой фотовольтаики, Институт Хана-Мейтнер, Берлин, Германия

  • 09.2001 Приглашенный ученый
  • 01.2004 - 02.2004 Приглашенный ученый
  • 01.2005 - 09.2006 Стипендиат фонда Александра фон Гумбольта
  • 10.2006 - 04.2007 Научный сотрудник

Инновации для высокопроизводительной микроэлектроники ГмбХ, Франкфурт (Одер), Германия

  • 09.2002 - 12.2002 Приглашенный ученый

Отдел микросистемной технологии, Университет Фрайбург, Фрайбург им Брайсгау, Германия

  • 03.2010 - 08.2010 Стипендиат фонда Алесандра фон Гумбольта (стипендия возврата)

НАУЧНЫЕ ИНТЕРЕСЫ И ОПЫТ:
 

Общие: Термодинамика и кинетические расчеты (методы конечных разностей, конечных элементов, Монте-Карло) процессов и механизмов формирования структур твердых тел и функционирования приборов на их основе.

Активные темы исследований:

  • термодинамика и кинетика фазового разделения в нестехиометрических пленках оксида кремния
  • кинетика и механизмы самоорганизующегося каталитического роста нитевидных кристаллов кремния
  • термодинамика и кинетика метал-индуцированной кристаллизации
  • кинетика и механизмы геттерирования в кристаллическом кремнии
  • кинетика и механизмы преципитации кислорода при быстрого термического отжига

Профессиональные навыки:

  • численные методы решения всех типов дифференциальных уравнений
  • моделирование Монте-Карло
  • программирование в среде Visual C + + и Wolfram Research Mathematica
  •  

ПУБЛИКАЦИИ:
46 научных статей, опубликованных и представленных для публикации в цитируемые научные журналы и сборники трудов конференций
35 работ, опубликованных в сборниках тезисов конференций

НАГРАДЫ, ГРАНТЫ:

  • 1995, 1997 Гранты фонда Сороса по физике для студентов
  • 2001-2002 Стипендия для молодых исследователей от Инновации для высокопроизводительной микроэлектроники ГмбХ (Франкфурт / Одер, Германия)
  • 2005-2006 Стипендия фонда Александра фон Гумбольта
  • 2006, 2007 внесен в библиографические издания "Who is Who in the World"
  • 2010 Стипендия возврата фонда Александра фон Гумбольта
  •  

ИНТЕРЕСЫ:
Бальные танцы, восточные философии, иностранные языки, работа по дереву, вырезание из дерева

ЗНАНИЕ ЯЗЫКОВ:
Русский, украинский - родные, английский, немецкий - высокий уровень, французский - базовый уровень

 

PUBLICATION LIST

 

Papers

  1. I. E. Maronchuk, M. N. Naidenkov, M. V. Naidenkova, A. V. Sarikov, and T. L. Voloshina Influence of physical and chemical surface treatment on the photoluminescence of porous silicon, Technical Physics 44 (1999) 122–123.

  2. I. E. Maronchuk and A. V. Sarikov Porous silicon luminescence after chemical treatment and high–temperature annealing, Functional Materials, 6 (1999) 489–492.

  3. A. A. Evtukh, V. G. Litovchenko, Yu. M. Litvin, A. A. Efremov, Yu. V. Rassamakin, A. V. Sarikov, and D. V. Fedin Porous silicon as a material for enhancement of electron field emission, Phys. Low–Dim. Struct. N 1/2 (2001) 65–72.

  4. A. A. Efremov, V. G. Litovchenko, G. Ph. Romanova, A. V. Sarikov, and C. Claeys Carbon enhancement of SiO2 nucleation in buried oxide synthesis. Computer simulations and secondary ion mass spectroscopy depth profiling, J. Electrochem. Soc. 148 (2001) F92–F97.

  5. A. A. Efremov and A. V. Sarikov Computer modelling of the porous silicon formation process, Materials of XVI Open Scientific and Practical Conf. of Young Scientists and Specialists of G. V. Karpenko Physico-Mechanical Institute of the National Academy of Sciences of Ukraine, KMN–2001 (Lvov, Ukraine, 16–18 May 2001), 47–50.

  6. A. A. Evtukh, V. G. Litovchenko, Yu. M. Litvin, A. A. Efremov, Yu. V. Rassamakin, A. V. Sarikov, and D. V. Fedin Porous silicon as a material for enhancement of electron field emission, Proc. of the NANOMEETING–2001: Physics, Chemistry and Application of Nanostructures (Minsk, Belarus, 22–25 May 2001), 412–416.

  7. A. A. Evtukh, V. G. Litovchenko, Yu. M. Litvin, D. V. Fedin, Yu. V. Rassamakin, A. V. Sarikov, A. G. Chakhovskoi, C. E. Hunt, and T. E. Felter Porous silicon coated with ultra–thin diamond–like carbon film cathodes, Mat. Res. Soc. Proc. 658E (2001) D15.4.1–D15.4.6.

  8. V. G. Litovchenko, A. A. Evtukh, A. A. Efremov, N. I. Klyui, Yu. V. Rassamakin, V. G. Popov, V. P. Kostylyov, A. V. Sarikov, Ch. Haessler, and W. Koch Combined bi–layered Al/Si* getter for multicrystalline solar silicon improvement: properties, advantages and mechanisms, B. McNelis et al. (eds.), Proc. 17th European Photovoltaic Solar Energy Conf. (Munich, Germany, 22–26 October 2001), Vol. II, 1428–1431.

  9. A. V. Sachenko, V. G. Litovchenko, A. P. Gorban, V. P. Kostylyov, and A. V. Sarikov Modelling processes of photoconversion in micro– and multicrystalline silicon, B. McNelis et al. (eds.), Proc. 17th European Photovoltaic Solar Energy Conf. (Munich, Germany, 22–26 October 2001), Vol. III, 2933–2936.

  10. A. Efremov, A. Evtukh, N. Klyui, V. Litovchenko, V. Popov, Yu. Rassamakin, A. Sarikov, Ch. Haessler, and W. Koch Effective gettering mechanisms in solar multicrystalline materials, Solid State Phenomena 82–84 (2002) 719–724.

  11. A. I. Klimovskaya, I. P. Ostrovskii, A. A. Efremov, A. V. Sarikov, and S. V. Kostyukevich Controlling size distribution in silicon brush-like superstructures grown by self-organisation, Mater. Sci. & Eng. B 88 (2002) 298–301.

  12. V. G. Litovchenko, N. I. Klyui, A. A. Evtukh, A. A. Efremov, A. V. Sarikov, V. G. Popov, V. P. Kostylyov, Yu. V. Rassamakin, Ch. Haessler, and W. Koch Solar cells prepared on multicrystalline silicon subjected to new gettering and passivation treatments, Solar Energy Mater. & Solar Cells 72 (2002) 343–351.

  13. V. G. Litovchenko, N. L. Dmitruk, D. V. Korbutyak, and A. V. Sarikov Effect of surface on the excitonic characteristics of semiconductors, Semiconductors 36 (2002) 424–429.

  14. V. G. Litovchenko, A. V. Sarikov, D. V. Korbutyak, and S. G. Krylyuk Influence of the dimensionality on the characteristics of electron–phonon interaction, Phys. Low–Dim. Struct. N 1/2 (2002) 161–169.

  15. A. I. Klimovskaya, I. P. Ostrovskii, A. A. Efremov, A. V. Sarikov, and S. A. Kostyukevich Self–organizing growth of silicon dot– and wire–like microcrystals on isolated substrates, F. Balestra et al. (eds.), Progress in SOI Structures and Devices Operating at Extreme Conditions, Kiev, 2000, q343–348, (2002 Kluwer Academic Publishers. Printed in Netherlands).

  16. A. A. Efremov, V. G. Litovchenko, and A. V. Sarikov The formation of the low-dimensional porous silicon – based structures with extremely high exciton binding energy, Mater. Sci. & Eng. C 23 (2003) 165–170.

  17. A. V. Sachenko, A. P. Gorban, V. P. Kostylyov, V. G. Litovchenko, and A. V. Sarikov Peculiarities of photoconversion in multi- and single crystalline silicon (Особливості фотоперетворення в мульти– та мікрокристалічному кремнії), Ukr. J. Phys. 48 (2003) 444–448 [in Ukrainian].

  18. V. Litovchenko, N. Klyui, A. Sarikov, V. Kostylev, R. Muminov, M. Tursunov, U. Gaziev, and Z. Settarova Silicon solar cells with Si/SiOx nanocomposite optimized antireflective coatings, Appl. Solar Energy 39 (2003) 1–8.

  19. A. A. Efremov, V. G. Litovchenko, A. V. Sarikov, H. Richter, and V. D. Akhmetov Computer modelling of SiO2 precipitation in CZ–Si doped with nitrogen, Solid State Phenomena 95–96 (2004) 405–412.

  20. V. G. Verbitsky, S. V. Osinsky, and A. V. Sarikov Calculation of the composition of graded band gap A3B5 structures for white light emitting diodes (Расчет элементного состава варизонных структур А3В5 для белых светодиодов), Physical Surface Engineering, 1 (2004) 341–346 [in Russian].

  21. V. G. Verbitsky, S. V. Osinsky, and A. V. Sarikov, Ion stimulation for growing InxGayAl1–x–yNuAsvP1–u–v solid solutions for white light emitting diodes (Ионная стимуляция получения твердых растворов InxGayAl1–x–yNuAsvP1–u–v для диодных источников белого света), Physical Surface Engineering 2 (2004) 74–78 [in Russian].

  22. J. Schneider, J. Klein, A. Sarikov, M. Muske, S. Gall, and W. Fuhs Suppression of nucleation during the aluminum-induced layer exchange process, Mat. Res. Soc. Proc. 862 (2005) A2.2.1–A2.2.6.

  23. N. Klyui, V. Litovchenko, L. Neselevska, V. Kostylyov, A. Sarikov, N. Taraschenko, M. Kittler, and W. Seifert, Solar cells based upon multicrystalline Si with DLC antireflection and passivating coatings, Ukr. J. Phys. 51 (2006) 61–65.

  24. J. Schneider, A. Sarikov, J. Klein, M. Muske, I. Sieber, T. Quinn, H. S. Reehal, S. Gall, and W. Fuhs A simple model explaining the preferential (100) orientation of silicon thin films made by aluminium-induced layer exchange, J. Cryst. Growth 287 (2006) 423–427.

  25. A. Sarikov, J. Schneider, J. Klein, M. Muske, and S. Gall Theoretical study of the initial stage of the aluminium-induced layer-exchange process, J. Cryst. Growth 287 (2006) 442–445.

  26. N. I. Klyui, V. G. Litovchenko, A. N. Lukyanov, L. V. Neselevskaya, A. V. Sarikov, V. G. Dyskin, U. Kh. Gaziev, Z. S. Settarova, and M. N. Tursunov Influence of deposition conditions on the antireflection properties of diamond-like carbon films for Si-based solar cells, Techn. Phys. 51 (2006) 654–658.

  27. J. Schneider, A. Schneider, A. Sarikov, J. Klein, M. Muske, S. Gall, and W. Fuhs Aluminum-induced crystallization: nucleation and growth process, J. Non-Cryst. Solids 352 (2006) 972–975.

  28. A. Sarikov, J. Schneider, M. Muske, S. Gall, and W. Fuhs Theoretical study of the kinetics of grain nucleation in the aluminium-induced layer-exchange process, J. Non-Cryst. Solids 352 (2006) 980–983.

  29. A. Sarikov, J. Schneider, M. Muske, I. Sieber, and S. Gall A model of preferential (100) crystal orientation of Si grains grown by aluminium-induced layer-exchange process, Thin Solid Films 515 (2007) 7465–7468.

  30. A. Sarikov, V. Litovchenko, I. Lisovskyy, I. Maidanchuk, and S. Zlobin Role of oxygen migration in the kinetics of the phase separation of nonstoichiometric silicon oxide films during high-temperature annealing, Appl. Phys. Lett. 91 (2007) 133109-1 – 133109-3.

  31. Ye. Baganov, A. Sarikov, A. Chernov, and S. Shutov Obtaining polycrystalline GaSb films by crystallisation from the thin layer of solution-melt (Отримання полікристалічних плівок GaSb кристалізацією з тонкого шару розчину-розплаву), Herald of Lvov University. Physical Series, issue 41 (2008) 137–142 [in Ukrainian].

  32. M. V. Voitovich, I. P. Lisovskyy, A. V. Sarikov, V. G. Litovchenko, and I. M. Khatsevich Correlation between the structure of Si nanoinclusions and composition of oxide matrix (Зв'язок між структурою кремнієвих нановключень та складом оксидної матриці), Proc. Int. Sci. Conf. “Physico-Chemical Principles of the Formation and Modification of Micro- and Nanostructures” FMMN’2008 (Kharkov, Ukraine, 8–10 October 2008), Vol. 2, 311–314 [in Ukrainian].

  33. I. P. Lisovskyy, M. V. Voitovich, A. V. Sarikov, V. G. Litovchenko, A. B. Romanyuk, V. P. Melnik, and I. M. Khatsevich Transformation of the structure of silicon oxide during the formation of Si nanoinclusions under thermal annealing, Ukr. J. Phys. 54 (2009) 383-390.

  34. V. Litovchenko, I. Lisovskyy, M. Voitovich, A. Sarikov, S. Zlobin, V. Kladko, and V. Machulin, Study of the mechanisms of oxygen precipitation in RTA annealed Cz-Si wafers, Solid State Phenomena 156-158 (2010) 279-282.

  35. V. G. Litovchenko, A. V. Sarikov, and A. A. Evtukh, An express method for the study of planar homogeneity of diffusion length in multicrystalline solar silicon, Solid State Phenomena 156-158 (2010) 449-453.

  36. A. Sarikov, B. Stegemann, and M. Schmidt, A model of the passivation of ultrathin SiO2 layer / Si substrate interfaces by atomic hydrogen from a thermalised plasma source, Thin Solid Films 518 (2010) 4662-4666.

  37. A. Sarikov, J. Schneider, J. Berghold, M. Muske, I. Sieber, S. Gall, and W. Fuhs, A kinetic simulation study of the mechanisms of aluminum induced layer exchange process, J. Appl. Phys. 107 (2010) 114318-1 – 114318-11.

  38. Ye. A: Baganov, A. N. Demensky, A. V. Sarikov, and S. V. Shutov, Crystallisation of thin polycrystalline GaSb films on non orienting substrates by the forced cooling of saturated solution-melt (Кристаллизация поликристаллических тонких пленок GaSb на неориентирующих подложках принудительным охлаждением насыщенного раствора-расплава), Proc. V Int. Scientific and Practical Conference “Modern Methods and Technologies for the Material Formation and Treatment”, (Minsk, Belarus, 15-17 September 2010), Vol. 1. Construction and Functional Materials in Modern Technique and Their Formation Methods. Materials for Micro- and Nanoelectronics, 23-25 [in Russian].

  39. A. Sarikov, V. Naseka, and V. Litovchenko, Influence of precipitates on the kinetics of iron gettering from the Si wafers by the Al layers, Physica Status Solidi (c) 8 (2011) 767-770.

  40. A. Klimovskaya, A. Sarikov, Yu. Pedchenko, A. Voroshchenko, O. Lytvyn, and A. Stadnik, Study of the formation processes of gold droplet arrays on Si substrates by high temperature anneals, Nanoscales Res. Lett. 6 (2011) 151-1 – 151-8.

  41. A. Sarikov, A. Klimovskaya, O. Oberemok, O. Lytvyn, and O. Stadnik, A model of the evolution of the Au/Si droplet ensembles during rapid thermal annealing at high temperatures, Adv. Mater. Res. 276, (2011) 187–194.

  42. A. Sarikov, V. Litovchenko, I. Lisovskyy, M. Voitovich, S. Zlobin, V. Kladko, N. Slobodyan, V. Machulin, and C. Claeys, Mechanisms of oxygen precipitation in Cz-Si wafers subjected to rapid thermal anneals, J. Electrochem. Soc. 158 (2011) H772–H777.

  43. A. Sarikov, Influence of point defects on the equilibrium concentration of interstitial oxygen in crystalline silicon, Ukr. J. Phys. 56 (2011) 572–578.

  44. A. Sarikov, Metal induced crystallisation mechanism of the metal catalysed growth of silicon wire-like crystals, Appl. Phys. Lett. 99 (2011) 143102-1 – 143102-3.

  45. A. Sarikov and V. Naseka, Characteristics of gettering process in multicrystalline Si wafers by the combined porous Si / Al getters, Semicond. Phys., Quantum Electronics and Optoelectronics 15 (2011) (accepted for publication).

  46. A. Sarikov and M. Zacharias, Thermodynamic model of equilibrium states in Si / Si oxide systems, Phys. Rev B (submitted).

 

Published contributions to academic conferences

  1. T. L. Voloshina, I. E. Maronchuk, M. V. Naidenkova, and A. V. Sarikov Influence of surface treatment on porous silicon photoluminescence (Влияние обработки поверхности на фотолюминесценцию пористого кремния), Abstracts of the VI Int. Conf. on Phys. and Technol. of Thin Films (Ivano–Frankovsk, Ukraine, 26-31 May 1997), 110–111 [in Russian].

  2. I. Y. Maronchuk and A. V. Sarikov Luminescence of chemically treated and high temperature annealed porous silicon, Abstracts of the Int. Workshop “Physics and Technology of Nanostructured, Multicomponent Materials” PTNMM’98 (Uzhghorod, Ukraine, 24–26 September 1998), 43.

  3. A. A. Efremov and A. V. Sarikov Modelling the formation of the porous medium under electrochemical etching, Abstract Book of the 11th General Conf. of the European Phys. Soc. EPS–11: Trends in Physics (London, Great Britain, 6–10 September 1999), 36.

  4. A. A. Efremov and A. V. Sarikov Modelling processes of gettering impurities by the porous silicon layer, Extended abstracts of the 2nd Int. Conf. “Porous Semiconductors – Science and Technology” (Madrid, Spain, 12–17 March 2000), 172.

  5. A. A. Efremov and A. V. Sarikov Modelling formation of nanovoids in silicon induced by hydrogen ion implantation, Program and abstract book of the 18th General Conf. of the Cond. Matter Division of the European Phys. Soc. EPS–CMD18–2000 (Montreux, Switzerland, 13–17 March 2000), 266.

  6. V. G. Litovchenko and A. V. Sarikov Peculiarities of the exciton and exciton–phonon characteristics of the surface (Особенности экситонных и экситонфононных характеристик поверхности), Abstracts of V Russian Conf. on Semicond. Phys. (Nizhniy Novgorod, Russia, 10–14 September 2001), Vol. 2, 278 [in Russian].

  7. V. G. Litovchenko, A. A. Efremov, A. V. Sarikov, and H. Richter Modelling point defect agglomeration at growing CZ–Si in nitrogen atmosphere (Моделирование агломерации точечных дефектов при выращивании CZ–Si в атмосфере азота), Abstracts of the Meeting on the Crystal Growth, Films and Structural Defects in Silicon (with foreign participation) “SILICON–2002” (Novosibirsk, Russia, 9–12 July 2002), 97 [in Russian].

  8. A. A. Efremov and A. V. Sarikov Computer modelling of porous layers formation on silicon by electrochemical etching (Компьютерное моделирование формирования пористых слоев на кремнии при электрохимическом травлении), Abstracts of the Meeting on the Crystal Growth, Films and Structural Defects in Silicon (with foreign participation) “SILICON–2002” (Novosibirsk, Russia, 9–12 July 2002), 155 [in Russian].

  9. A. V. Sarikov and V. G. Litovchenko Influence of dimensionality on exciton characteristics in luminescent semiconductor structures, Abstracts of the 12th General Conf. of the European Phys. Soc. EPS–12: Trends in Physics (Budapest, Hungary, 29–30 August 2002), 243.

  10. U. Ch. Gasiev, N. I. Klyui, V. G. Litovchenko, R. A. Muminov, A. V. Sarikov, and Z. Settarova Nanostructured SiOx films for the improvement of Si solar cells antireflection coating, Abstracts of the 1st Ukrainian Sci. Conf. on Semicond. Phys. (with foreign participation) (Odessa, Ukraine, 10–14 September 2002), Vol. 1 “Plenar and oral presentations”, 123–124.

  11. A. V. Sachenko, A. P. Gorban, V. P. Kostylyov, V. G. Litovchenko, and A. V. Sarikov Polycrystalline silicon–based solar elements. Theory and experiment (Сонячні елементи на основі полікристалічного кремнію. Теорія та експеримент), Abstracts of the 1st Ukrainian Sci. Conf. on Semicond. Phys. (with foreign participation) (Odessa, Ukraine, 10–14 September 2002), Vol. 2 “Poster presentations”, 148 [in Ukrainian].

  12. A. A. Efremov, A. A. Evtukh, N. I. Klyui, V. P. Kostylyov, V. G. Litovchenko, Yu. V. Rassamakin, A. V. Sarikov, Ch. Haessler, and W. Koch Study of the gettering mechanisms in the solar silicon, Abstracts of the 1st Ukrainian Sci. Conf. on Semicond. Phys. (with foreign participation) (Odessa, Ukraine, 10–14 September 2002), Vol. 2 “Poster presentations”, 151–152.

  13. A. A. Efremov, V. G. Litovchenko, and A. V. Sarikov Computer modelling of the SiO2 precipitate formation in silicon doped with nitrogen (Компьютерное моделирование формирования преципитатов SiO2 в кремнии, легированном азотом), Abstract Book of the 3rd Russian Conf. on Mater. Sci. and Physico–Techn. Principles of Technol. of Doped Si Crystals and Device Struct. on Them (Silicon–2003) (Moscow, Russia, 26–30 May 2003), 84–86 [in Russian].

  14. U. Kh. Gaiziev, V. G. Dyskin, Z. S. Settarova, M. U. Dzhanklych, N. I. Klyui, V. G. Litovchenko, A. N. Lukyanov, L. V. Neselevskaya, and A. V. Sarikov Effective diamond-like carbon antireflection coatings for Si photoelements (Эффективные просветляющие покрытия для кремниевых фотоэлементов на основе алмазоподобных пленок углерода), Materials of the Conf. "Photoelectric Phenomena in Semiconductors 2004" (Tashkent, Uzbekistan, 20–21 April 2004), 29–30 [in Russian].

  15. V. G. Verbitsky, S. V. Osinsky, and A. V. Sarikov Six-component solid solutions of InxGayAl1–x–yNuAsvP1–u–v for light emitters of white light (Шестикомпонентные твердые растворы InxGayAl1–x–yNuAsvP1–u–v для источников белого света), Short abstracts of the 3rd Russian Conf. "Gallium, indium, and aluminium nitrides – structures and devices" (Moscow, Russia, 7–9 June 2004), 48–49 [in Russian].

  16. A. V. Sarikov Modelling of the platinum gettering by a porous Si layer created by hydrogen ion implantation, Book of Abstracts of the 20th General Conf. of the Cond. Matter Division of the European Phys. Soc. (Prague, Czech Republic, 19–23 July 2004), 111.

  17. V. G. Litovchenko, A. A. Grigoryev, and A. V. Sarikov Mechanisms of the increase of exciton binding energy in Si nanoclusters (Механізми збільшення енергії звязку екситонів в Si-нанокластерах), Abstracts of the 2nd Ukrainian Conf. on Semicond. Phys. (with foreign participation) (Chernovtsy, Ukraine, 20–24 September 2004), Vol. 2, 202 [in Ukrainian].

  18. J. Schneider, I. Sieber, A. Sarikov, J. Klein, M. Muske, S. Gall, and W. Fuhs Crystal orientation of silicon thin films made by aluminum-induced layer exchange, Abstract Book of the 16th Amer. Conf. on Cryst. Growth and Epitaxy (Big Sky Resort, Big Sky, Montana, USA, 10–15 July 2005), 59.

  19. A. Sarikov, J. Schneider, J. Klein, M. Muske, and S. Gall Theoretical study of initial stages of the aluminium-induced layer-exchange process, Abstract Book of the 16th Amer. Conf. on Cryst. Growth and Epitaxy (Big Sky Resort, Big Sky, Montana, USA, 10–15 July 2005), 60.

  20. A. Sarikov, J. Schneider, M. Muske, and S. Gall Theoretical study of the kinetics of grain nucleation in the aluminium-induced layer-exchange process, Book of Abstracts of the 21st Int. Conf. on Amorphous and Nanocryst. Semicond. (Lisbon, Portugal, 4–9 September 2005), 84.

  21. J. Schneider, A. Schneider, A. Sarikov, J. Klein, M. Muske, S. Gall, and W. Fuhs Aluminium-induced crystallisation: nucleation and growth process, Book of Abstracts of the 21st Int. Conf. on Amorphous and Nanocryst. Semicond. (Lisbon, Portugal, 4–9 September 2005), 267.

  22. A. Sarikov, V. Litovchenko, A. Evtukh, and V. Kostylyov Improved planar homogeneity of multicrystalline solar silicon, Abstract Book of the AKF-Frühjahrstagung 2006 in conjunction with 21st General Conf. of the EPS Cond. Matter Division (Dresden, Germany, 27–31 March 2006), 427.

  23. Ye. Baganov, A. Sarikov, A. Chernov, N. Samoilov, and S. Shutov Growth and properties of this polycrystalline GaSb films on non-orienting substrates (Получение и свойства тонких поликристаллических пленок GaSb на неориентирующих подложках), Materials of 9th Conf. “Gallium Arsenide and III–V Semiconductor Composites” (Tomsk, Russian Federation, 3–5 October 2006), 266–267 [in Russian].

  24. A. Sarikov Kinetic simulations of the aluminium-induced layer-exchange process, Book of Abstracts of the Humboldt-Kolleg “Actual Science in Ukraine: Humboldt-Club Ukraine General Assembly” (Kiev, Ukraine, 11-12 January 2008), 51.

  25. A. Sarikov, Ye. Baganov, and S. Shutov Study of the formation mechanisms of the polycrystalline thin films of GaSb on non-orienting substrates during forced cooling of saturated solution-melt, Verhandlungen der Deutschen Physikalischen Gesellschaft, N 1, 2008, 72nd Annual Meeting 2008 and DPG-Spring Meeting, (Berlin, Germany, 25-29 February), 230-231.

  26. A. V. Sarikov, V. G. Litovchenko, I. P. Lisovsky, I. Yu. Maidanchuk, and S. A. Zlobin Role of oxygen in the kinetics of the growth of Si nanoparticles in silicon oxide during high-temperature annealing, Materials of the 1st Int. Sci. Conf. “NANO-2008: Nanostructural Materials 2008: Belarus – Russia – Ukraine” (Minsk, Belarus, 22-25 April 2008), 171.

  27. I. P. Lisovskyy, V. G. Litovchenko, V. P. Kladko, V. F. Machulin, M. V. Voitovich, A. V. Sarikov, and S. A. Zlobin Oxygen behaviour under the thermal treatments of Cz-Si of different kinds (Поведение кислорода в Cz-Si при термических обработках различного типа), Abstracts of V Int. Conf. and IV Young Scientists and Specialists School on Actual Problems of the Physics, Material Science, Technology, and Diagnostics of Silicon, Si-Based Nanometre Structures, and Devices “SILICON-2008” (Chernogolovka, Russia, 1-4 July 2008), 94 [in Russian].

  28. A. Sarikov, A general microscopic approach to the study of heterogeneous nucleation phenomenon based on the classical nucleation theory, Abstract Book of the 22nd General Conf. of the Cond. Matter Division of the European Physical Society, (Rome, Italy, 25-29 August 2008).

  29. A. I. Klimovskaya, P. M. Lytvyn, Yu. N. Pedchenko, A. T. Voroschenko, O. S. Oberemok, A. V. Sarikov, O. A. Stadnik, Yu. M. Litvin, and I. V. Prokopenko, Gold assisted growth of silicon nanowires, Conference Abstracts of the 1st Ukrainian-French Seminar “Semiconductor-On-Insulator Materials, Devices and Circuits: Physics, Technology and Diagnostics” & 6th International SemOI Workshop “Nanoscaled Semiconductor-On-Insukator Materials, Sensors and Devices”, (Kiev, Ukraine, 26-30 April 2010) 25-26.

  30. A. Sarikov, A. Klimovskaya, O. Oberemok, O. Lytvyn, and O. Stadnik, A model of the evolution of the Au/Si droplet ensembles during rapid thermal annealing at high temperatures, Conference Abstracts of the 1st Ukrainian-French Seminar “Semiconductor-On-Insulator Materials, Devices and Circuits: Physics, Technology and Diagnostics” & 6th International SemOI Workshop “Nanoscaled Semiconductor-On-Insulator Materials, Sensors and Devices”, (Kiev, Ukraine, 26-30 April, 2010) 127-128.

  31. V. G. Litovchenko, I. P. Lisovskyy, V. F. Machulin, V. P. Kladko, A. V. Sarikov, and M. V. Mezhenny, Influence of growth defects on the RTA induced accelerated formation of SiO2 nanoprecipitates in Si (Влияние ростовых дефектов на ускоренное формирование нанопреципитатов SiO2 в Si под действием RTA), Abstracs of the VII Int. Conf. on Actual Problems of the Physics, Material Science, and Diagnostics of Silicon, Si-Based Nanometre Structures, and Devices “SILICON-2010” (Nizhniy Novgorod, Russia, 6-10 July 2010) 168 [in Russian].

  32. V. Naseka, V. Melnik, A. Sarikov, O. Oberemok, B. Romanyuk, V. Litovchenko, S. Zlobin, and V. Popov, Influence of oxygen state in crystalline Si on the implanted Fe and Ti gettering by Al layer, Mater. XIII Int. Conf. on the Phys. and Technol. of Thin Films and Nanosystems ICPTTFN-XIII (Ivano-Frankivsk, Ukraine, 16-21 May 2011) Vol. 2, P. 36.

  33. A. Sarikov, Thermodynamic theory of the phase separation in the non stoichiometric silicon oxide films, Mater. XIII Int. Conf. on the Phys. and Technol. of Thin Films and Nanosystems ICPTTFN-XIII (Ivano-Frankivsk, Ukraine, 16-21 May 2011) Vol. 2, P. 53.

  34. A. Pastushenko, A. Sarikov, and A. Klimovskaya, Evolution of gold droplets on the silicon surface (Эволюция капель золота на поверхности кремния), Abstract Book of the V Ukrainian Scientific Conference on Physics of Semiconductors USCPS-5 (Uzhgorod, Ukraine, 9-15 October 2011), P. 338-339 [in Russian].

  35. A. Sarikov, Strain effect on the phase separation in non stoichiometric silicon oxide films, Abstract Book of the V Ukrainian Scientific Conference on Physics of Semiconductors USCPS-5 (Uzhgorod, Ukraine, 9-15 October 2011), P. 432-433.

 

Patents

  1. V. G. Litovchenko, A. A. Evtukh, N. I. Klyui, Yu. V. Rassamakin, V. G. Popov, V. P. Kostylyov, A. A. Efremov, and A. V. Sarikov Method of the gettering of recombinationactive impurities in single- and polycrystalline silicon (Спосіб гетерування рекомбінаційно-активних домішок в монокристалічному та полікристалічному кремнії), Patent UA 63399A, Ukraine, 15.01.2004, Bulletin N1 [in Ukrainian].

  2. S. V. Shutov, A. V. Sarikov, and A. Yu. Chernov Method for the formation of the thin films of A3B5 semiconductors (Спосіб отримання тонких шарів AIIIBV), Declarative patent for useful model N 10404, Ukraine, H01C 17/00. u 2005 03837, Applied for 22.04.2005, Published 15.11.2005, Bulletin N11 [in Ukrainian].

  3. Ye. A. Baganov, A. Yu. Chernov, A. V. Sarikov, and S. V. Shutov Method for the formation of the polycrystalline layers of A3B5 semiconductors on non orienting substrate (Спосіб отримання полікристалічних шарів AIIIBV на неорієнтуючій аморфній підкладці), Patent for useful model N 19573, Ukraine, H01C 17/00. u 2006 07670, Applied for 10.07.2006, Published 15.12.2006, Bulletin N12 [in Ukrainian].

  4. S. V. Shutov, Ye. A. Baganov, and A. V. Sarikov Method for the formation of the heteroepitaxial layers of multicomponent semiconductor compounds (Спосіб гетероепітаксійного вирощування шарів напівпровідникових багатокомпонентних сполук), Patent for useful model N 38628, Ukraine, H01L 21/02. u 2008 09144, Applied for 11.07.2008, Published 12.01.2009, Bulletin N1 [in Ukrainian].

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Дизайн: Інститут високих технологій
Ivan Ivanov